PART |
Description |
Maker |
AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
NPTB00025 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
NPT1015 NPT1015-15 |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
NPT1004 NPT1004-15 |
Gallium Nitride 28V, 45W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
DDW-JJD-N1 DDB-JJS-K1 DDB-JJS-K2 DDB-JJS-KL2-1-I1 |
LED GaN SINGLE COLOR LED, BLUE LED GaN 氮化镓发光二极管 LED GaN SINGLE COLOR LED, WHITE
|
DOMINANT Opto Technologies Sdn. Bhd. DOMINANT Opto Technologies Sdn Bhd. DOMINANT[DOMINANT Semiconductors]
|
DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp. IXYS[IXYS Corporation]
|
RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
GS150TC25104 GS150TA25104 GS150TI25104 |
Gallium Arsenide Schottky Rectifier 4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS Corporation
|
|